The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth

Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Goesele U, Bachmann J, Nielsch K (2010)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2010

Journal

Publisher: American Chemical Society

Book Volume: 132

Pages Range: 7592-+

DOI: 10.1021/ja102590v

Abstract

Conformal atomic layer deposition of thin Sb(2)S(3) layers takes place epitaxially on suitable substrates at 90 degrees C. More elevated deposition temperatures increase the mobility of the solid and result in the diffusion of Sb(2)S(3) along surface energy gradients. On an Sb(2)Se(3) wire that presents the high-energy c facet at its extremity, this results in the axial elongation of the wire with a Sb(2)S(3) segment. When an Sb(2)S(3) wire whose c planes are exposed on the sides is used as the substrate, the homoepitaxy collects material laterally and yields a nano-object with a rectangular cross section.

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How to cite

APA:

Yang, R.B., Zakharov, N., Moutanabbir, O., Scheerschmidt, K., Wu, L.-M., Goesele, U.,... Nielsch, K. (2010). The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth. Journal of the American Chemical Society, 132, 7592-+. https://dx.doi.org/10.1021/ja102590v

MLA:

Yang, Ren Bin, et al. "The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth." Journal of the American Chemical Society 132 (2010): 7592-+.

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