Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Goesele U, Bachmann J, Nielsch K (2010)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2010
Publisher: American Chemical Society
Book Volume: 132
Pages Range: 7592-+
DOI: 10.1021/ja102590v
Conformal atomic layer deposition of thin Sb(2)S(3) layers takes place epitaxially on suitable substrates at 90 degrees C. More elevated deposition temperatures increase the mobility of the solid and result in the diffusion of Sb(2)S(3) along surface energy gradients. On an Sb(2)Se(3) wire that presents the high-energy c facet at its extremity, this results in the axial elongation of the wire with a Sb(2)S(3) segment. When an Sb(2)S(3) wire whose c planes are exposed on the sides is used as the substrate, the homoepitaxy collects material laterally and yields a nano-object with a rectangular cross section.
APA:
Yang, R.B., Zakharov, N., Moutanabbir, O., Scheerschmidt, K., Wu, L.-M., Goesele, U.,... Nielsch, K. (2010). The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth. Journal of the American Chemical Society, 132, 7592-+. https://doi.org/10.1021/ja102590v
MLA:
Yang, Ren Bin, et al. "The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth." Journal of the American Chemical Society 132 (2010): 7592-+.
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