Improved passive model for transient prediction of GaAs E/D MESFET analogue switches

Journal article


Publication Details

Author(s): Feng S, Seitzer D
Journal: IEE Proceedings Circuits Devices and Systems
Publisher: Institution of Electrical Engineers
Publication year: 1994
Volume: 141
Pages range: 105-110
ISSN: 1350-2409


Abstract


An improved passive model of a GaAs MESFET is presented, where the intrinsic elements have a continuous dependence on gate, source and drain voltages for the benefit of transient prediction. Based on this passive model and circuit equations, the transient behaviour of analogue switches with GaAs E/D MESFETs is characterised with transfer time and transient error voltage in the lime domain. An analytical expression is derived for the transfer time calculation of symmetrical devices that explains the influence of parasitic and external resistances. The transient error voltage induced by clock feedthrough is calculated in the E/D MESFET switches with a general load. Load and parasitic capacitances reduce the voltage amplitude of transient errors induced by a transient breakthrough in the switches with a low impedance load, but they increase its transfer time. Good agreement is obtained between theoretical prediction and measurement on the transient breakthrough with 0.5 mum GaAs E/D MESFETs.



FAU Authors / FAU Editors

Seitzer, Dieter Prof. Dr.
Lehrstuhl für Technische Elektronik


External institutions with authors

Fraunhofer-Institut für Integrierte Schaltungen (IIS)


How to cite

APA:
Feng, S., & Seitzer, D. (1994). Improved passive model for transient prediction of GaAs E/D MESFET analogue switches. IEE Proceedings Circuits Devices and Systems, 141, 105-110. https://dx.doi.org/10.1049/ip-cds:19949752

MLA:
Feng, Shen, and Dieter Seitzer. "Improved passive model for transient prediction of GaAs E/D MESFET analogue switches." IEE Proceedings Circuits Devices and Systems 141 (1994): 105-110.

BibTeX: 

Last updated on 2018-11-08 at 03:00