High gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology

Journal article


Publication Details

Author(s): Seitzer D, Feng S
Journal: Electronics Letters
Publisher: Institution of Engineering and Technology (IET)
Publication year: 1994
Volume: 30
Pages range: 636-637
ISSN: 0013-5194


Abstract


A high voltage gain operational amplifier implemented in 0.5 mum GaAs E/D HEMT technology is presented. The amplifier principally consists of a differential input stage and a high gain cascode stage which was developed by Toumazou and Haigh [1]. On-wafer measurement verifies that the amplifier achieves an open-loop voltage gain of 73 dB and a unity-gain bandwidth of 1.78 GHz.



FAU Authors / FAU Editors

Seitzer, Dieter Prof. Dr.
Lehrstuhl für Technische Elektronik


External institutions with authors

Fraunhofer-Institut für Integrierte Schaltungen (IIS)


How to cite

APA:
Seitzer, D., & Feng, S. (1994). High gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology. Electronics Letters, 30, 636-637. https://dx.doi.org/10.1049/el:19940467

MLA:
Seitzer, Dieter, and Shen Feng. "High gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology." Electronics Letters 30 (1994): 636-637.

BibTeX: 

Last updated on 2018-11-08 at 03:00