Characterization and improvement of GaAs HEMT analog switches for sampled-data applications

Journal article


Publication Details

Author(s): Feng S, Seitzer D
Journal: IEEE Journal of Solid-State Circuits
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Publication year: 1994
Volume: 29
Pages range: 844-850
ISSN: 0018-9200


Abstract


This paper presents design consideration an experimental comparison of GaAs HEMT analog switches for high-speed and high-precision sampled-data applications. At first, basic pass-transistor switches fabricated in a 0.5-mum GaAs HEMT technology are measured for characterization of transient errors induced due to clock-feedthrough and charge transfer. In order to improve the switch dynamic performances, a dual dummy transistor compensation technique is used and related driver circuitry is developed. On-wafer measurements demonstrate that the improved switch provides a significant reduction of the transient errors, a reasonable dynamic range, and a high isolation. The switch with a 0.53 pF load capacitor achieves a total harmonic distortion below -55 dB and -38 dB at 10 MHz and 1.0 GHz clock frequency, respectively.



FAU Authors / FAU Editors

Seitzer, Dieter Prof. Dr.
Lehrstuhl für Technische Elektronik


External institutions with authors

Fraunhofer-Institut für Integrierte Schaltungen (IIS)


How to cite

APA:
Feng, S., & Seitzer, D. (1994). Characterization and improvement of GaAs HEMT analog switches for sampled-data applications. IEEE Journal of Solid-State Circuits, 29, 844-850. https://dx.doi.org/10.1109/4.303725

MLA:
Feng, Shen, and Dieter Seitzer. "Characterization and improvement of GaAs HEMT analog switches for sampled-data applications." IEEE Journal of Solid-State Circuits 29 (1994): 844-850.

BibTeX: 

Last updated on 2018-11-08 at 03:00