Characterization and improvement of GaAs HEMT analog switches for sampled-data applications
Feng S, Seitzer D (1994)
Publication Status: Published
Publication Type: Journal article
Publication year: 1994
Journal
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Book Volume: 29
Pages Range: 844-850
DOI: 10.1109/4.303725
Abstract
This paper presents design consideration an experimental comparison of GaAs HEMT analog switches for high-speed and high-precision sampled-data applications. At first, basic pass-transistor switches fabricated in a 0.5-mum GaAs HEMT technology are measured for characterization of transient errors induced due to clock-feedthrough and charge transfer. In order to improve the switch dynamic performances, a dual dummy transistor compensation technique is used and related driver circuitry is developed. On-wafer measurements demonstrate that the improved switch provides a significant reduction of the transient errors, a reasonable dynamic range, and a high isolation. The switch with a 0.53 pF load capacitor achieves a total harmonic distortion below -55 dB and -38 dB at 10 MHz and 1.0 GHz clock frequency, respectively.
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Germany (DE)How to cite
APA:
Feng, S., & Seitzer, D. (1994). Characterization and improvement of GaAs HEMT analog switches for sampled-data applications. IEEE Journal of Solid-State Circuits, 29, 844-850. https://dx.doi.org/10.1109/4.303725
MLA:
Feng, Shen, and Dieter Seitzer. "Characterization and improvement of GaAs HEMT analog switches for sampled-data applications." IEEE Journal of Solid-State Circuits 29 (1994): 844-850.
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