Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

Journal article


Publication Details

Author(s): Nugraha MI, Hausermann R, Watanabe S, Matsui H, Sytnyk M, Heiß W, Takeya J, Loi MA
Journal: ACS Applied Materials and Interfaces
Publisher: AMER CHEMICAL SOC
Publication year: 2017
Volume: 9
Journal issue: 5
Pages range: 4719-4724
ISSN: 1944-8244
Language: English


Abstract


We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.



FAU Authors / FAU Editors

Heiß, Wolfgang Prof. Dr.
Professur für Werkstoffwissenschaften (lösungsprozessierte Halbleitermaterialien)
Sytnyk, Mykhailo
Institute Materials for Electronics and Energy Technology (i-MEET)


Additional Organisation
Institute Materials for Electronics and Energy Technology (i-MEET)


External institutions with authors

University of Groningen / Rijksuniversiteit Groningen
University of Tokyo
Yamagata University (YU)


Research Fields

Neue Materialien und Prozesse
Research focus area of a faculty: Technische Fakultät


How to cite

APA:
Nugraha, M.I., Hausermann, R., Watanabe, S., Matsui, H., Sytnyk, M., Heiß, W.,... Loi, M.A. (2017). Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics. ACS Applied Materials and Interfaces, 9(5), 4719-4724. https://dx.doi.org/10.1021/acsami.6b14934

MLA:
Nugraha, Mohamad I., et al. "Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics." ACS Applied Materials and Interfaces 9.5 (2017): 4719-4724.

BibTeX: 

Last updated on 2019-20-03 at 11:38