Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

Nugraha MI, Hausermann R, Watanabe S, Matsui H, Sytnyk M, Heiß W, Takeya J, Loi MA (2017)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2017

Journal

ACS Applied Materials and Interfaces American Chemical Society

Publisher: AMER CHEMICAL SOC

Book Volume: 9

Pages Range: 4719-4724

Journal Issue: 5

URI: http://pubs.acs.org/doi/abs/10.1021/acsami.6b14934

DOI: 10.1021/acsami.6b14934

Abstract

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.

Authors with CRIS profile

Mykhailo Sytnyk Institute Materials for Electronics and Energy Technology (i-MEET) Wolfgang Heiß Professur für Werkstoffwissenschaften (lösungsprozessierte Halbleitermaterialien)

Additional Organisation(s)

Institute Materials for Electronics and Energy Technology (i-MEET)

Involved external institutions

University of Tokyo JP Japan (JP) Yamagata University (YU) JP Japan (JP) University of Groningen / Rijksuniversiteit Groningen NL Netherlands (NL)

How to cite

APA:

Nugraha, M.I., Hausermann, R., Watanabe, S., Matsui, H., Sytnyk, M., Heiß, W.,... Loi, M.A. (2017). Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics. ACS Applied Materials and Interfaces, 9(5), 4719-4724. https://dx.doi.org/10.1021/acsami.6b14934

MLA:

Nugraha, Mohamad I., et al. "Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics." ACS Applied Materials and Interfaces 9.5 (2017): 4719-4724.

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