The quasi-free-standing nature of graphene on H-saturated SiC(0001)

Journal article
(Letter)


Publication Details

Author(s): Speck F, Jobst J, Fromm F, Ostler M, Waldmann D, Hundhausen M, Weber HB, Seyller T
Journal: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publication year: 2011
Volume: 9
Pages range: 12206
ISSN: 0003-6951


Abstract


We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy, we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p 5.0 - 6.5 1012 cm -2) with a carrier mobility of 3100 cm2/Vs at room temperature. Compared to graphene on the buffer layer, a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001) which justifies the term quasi-free-standing. © 2011 American Institute of Physics.



FAU Authors / FAU Editors

Fromm, Felix
Lehrstuhl für Laserphysik
Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Jobst, Johannes
Lehrstuhl für Angewandte Physik
Ostler, Markus
Lehrstuhl für Laserphysik
Seyller, Thomas PD Dr.
Naturwissenschaftliche Fakultät
Speck, Florian
Lehrstuhl für Laserphysik
Waldmann, Daniel
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M.,... Seyller, T. (2011). The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters, 9, 12206. https://dx.doi.org/10.1063/1.3643034

MLA:
Speck, Florian, et al. "The quasi-free-standing nature of graphene on H-saturated SiC(0001)." Applied Physics Letters 9 (2011): 12206.

BibTeX: 

Last updated on 2018-19-04 at 02:43