Electronic structure and electron dynamics at Si(100)

Journal article

Publication Details

Author(s): Weinelt M, Kutschera M, Schmidt R, Orth C, Fauster T, Rohlfing M
Journal: Applied Physics A-Materials Science & Processing
Publisher: Springer Verlag (Germany)
Publication year: 2005
Volume: 80
Pages range: 995-1003
ISSN: 0947-8396


The electronic structure and electron dynamics at a Si( 100) surface is studied by two-photon photoemission (2PPE). At 90 K the occupied D-up dangling-bond state is located 150 +/- 50 meV below the valence-band maximum (VBM) at the center of the surface Brillouin zone (Gamma) over bar and exhibits an effective hole mass of (0.5 +/- 0.15) m(e). The unoccupied D-down band has a local minimum at (Gamma) over bar at 650 +/- 50 meV above the VBM and shows strong dispersion along the dimer rows of the c( 4 x 2) reconstructed surface. At 300 K the D-down position shifts comparable to the Si conduction-band minimum by 40 meV to lower energies but the dispersion of the dangling-bond states is independent of temperature. The surface band bending for p-doped silicon is less than 30 meV, while acceptor-type defects cause significant and preparation-dependent band bending on n-doped samples. 2PPE spectra of Si( 100) are dominated by interband transitions between the occupied and unoccupied surface states and emission out of transiently and permanently charged surface defects. Including electron - hole interaction in many-body calculations of the quasi-particle band structure leads us to assign a dangling-bond split-off state to a quasi-one-dimensional surface exciton with a binding energy of 130 meV. Electrons resonantly excited to the unoccupied D-down dangling-bond band with an excess energy of about 350 meV need 1.5 +/- 0.2 ps to scatter via phonon emission to the band bottom at (Gamma) over bar and relax within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds.

FAU Authors / FAU Editors

Fauster, Thomas Prof. Dr.
Lehrstuhl für Festkörperphysik

External institutions
Jacobs University Bremen gGmbH

How to cite

Weinelt, M., Kutschera, M., Schmidt, R., Orth, C., Fauster, T., & Rohlfing, M. (2005). Electronic structure and electron dynamics at Si(100). Applied Physics A-Materials Science & Processing, 80, 995-1003. https://dx.doi.org/10.1007/s00339-004-3127-7

Weinelt, Martin, et al. "Electronic structure and electron dynamics at Si(100)." Applied Physics A-Materials Science & Processing 80 (2005): 995-1003.


Last updated on 2018-11-08 at 02:55