Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions

Journal article
(Original article)


Publication Details

Author(s): Wellmann P, Fahlbusch L, Salamon M, Uhlmann N
Editor(s): Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
Journal: Materials Science Forum
Publisher: Trans Tech Publications Ltd
Publishing place: Switzerland
Publication year: 2016
Volume: 858
Conference Proceedings Title: Materials Science Forum (Volume 858)
Pages range: 49-52
ISBN: 9783035710427
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


2D and 3D in-situ X-ray visualization was applied to study the behavior of the SiC source material during PVT growth under various growth conditions. Experiments were carried out in two growth chambers for the growth of 3 inch and 4 inch crystals. Growth parameters were varied in the gas room in terms of axial temperature and inert gas pressure. The study addresses the stability of the SiC source material surface. It is shown that a higher inert gas pressure (e.g. 25 mbar) inhibits an unintentional upward evolution of the SiC feedstock that interferes with the crystal growth interface. The latter is related to a suppression of a pronounced recrystallization inside the SiC source. For a low inert gas pressure (e.g. 10 mbar) it is concluded that the axial temperature gradient inside the source material needs to be decreased to less than ca. 10 K/cm.


FAU Authors / FAU Editors

Fahlbusch, Lars
Institute Materials for Electronics and Energy Technology (i-MEET)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Fraunhofer Development Center X-ray Technology (EZRT)


How to cite

APA:
Wellmann, P., Fahlbusch, L., Salamon, M., & Uhlmann, N. (2016). Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions. Materials Science Forum, 858, 49-52. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.49

MLA:
Wellmann, Peter, et al. "Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions." Materials Science Forum 858 (2016): 49-52.

BibTeX: 

Last updated on 2018-20-11 at 20:50