Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4

Niesner D, Otto S, Hermann V, Fauster T, Menshchikova TV, Eremeev SV, Aliev ZS, Amiraslanov IR, Babanly MB, Echenique PM, Chulkov EV (2014)


Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Publisher: American Physical Society

Book Volume: 89

Article Number: 081404

DOI: 10.1103/PhysRevB.89.081404

Abstract

Time-resolved two-photon photoemission was used to study the electronic structure and dynamics at the surface of SnSb2Te4, a p-type topological insulator. The Dirac point is found 0.32 +/- 0.03 eV above the Fermi level. Electrons from the conduction band minimum are scattered on a time scale of 43 +/- 4 fs to the Dirac cone. From there they decay to the partly depleted valence band with a time constant of 78 +/- 5 fs. The significant interaction of the Dirac states with bulk bands is attributed to their bulk penetration depth of similar to 3 nm as found from density functional theory calculations.

Authors with CRIS profile

Involved external institutions

How to cite

APA:

Niesner, D., Otto, S., Hermann, V., Fauster, T., Menshchikova, T.V., Eremeev, S.V.,... Chulkov, E.V. (2014). Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4. Physical Review B, 89. https://dx.doi.org/10.1103/PhysRevB.89.081404

MLA:

Niesner, Daniel, et al. "Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4." Physical Review B 89 (2014).

BibTeX: Download