Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4

Journal article


Publication Details

Author(s): Niesner D, Otto S, Hermann V, Fauster T, Menshchikova TV, Eremeev SV, Aliev ZS, Amiraslanov IR, Babanly MB, Echenique PM, Chulkov EV
Journal: Physical Review B
Publisher: American Physical Society
Publication year: 2014
Volume: 89
ISSN: 1098-0121


Abstract


Time-resolved two-photon photoemission was used to study the electronic structure and dynamics at the surface of SnSb2Te4, a p-type topological insulator. The Dirac point is found 0.32 +/- 0.03 eV above the Fermi level. Electrons from the conduction band minimum are scattered on a time scale of 43 +/- 4 fs to the Dirac cone. From there they decay to the partly depleted valence band with a time constant of 78 +/- 5 fs. The significant interaction of the Dirac states with bulk bands is attributed to their bulk penetration depth of similar to 3 nm as found from density functional theory calculations.



FAU Authors / FAU Editors

Fauster, Thomas Prof. Dr.
Lehrstuhl für Festkörperphysik
Hermann, Volker
Lehrstuhl für Festkörperphysik
Niesner, Daniel Dr.
Lehrstuhl für Festkörperphysik
Otto, Sebastian
Lehrstuhl für Festkörperphysik


External institutions with authors

Baku State University
Donostia International Physics Center (DIPC)
National Research Tomsk State University


How to cite

APA:
Niesner, D., Otto, S., Hermann, V., Fauster, T., Menshchikova, T.V., Eremeev, S.V.,... Chulkov, E.V. (2014). Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4. Physical Review B, 89. https://dx.doi.org/10.1103/PhysRevB.89.081404

MLA:
Niesner, Daniel, et al. "Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4." Physical Review B 89 (2014).

BibTeX: 

Last updated on 2018-11-08 at 02:54