In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

Journal article
(Letter)


Publication Details

Author(s): Kolesnik-Gray M, Sorger C, Biswas S, Holmes JD, Weber HB, Krstic V
Journal: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publication year: 2015
Volume: 106
ISSN: 0003-6951
Language: English


Abstract


We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.



FAU Authors / FAU Editors

Kolesnik-Gray, Maria Dr.
Lehrstuhl für Angewandte Physik
Krstic, Vojislav Prof. Dr.
Professur für Angewandte Physik
Sorger, Christian
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Kolesnik-Gray, M., Sorger, C., Biswas, S., Holmes, J.D., Weber, H.B., & Krstic, V. (2015). In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices. Applied Physics Letters, 106. https://dx.doi.org/10.1063/1.4922527

MLA:
Kolesnik-Gray, Maria, et al. "In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices." Applied Physics Letters 106 (2015).

BibTeX: 

Last updated on 2018-18-06 at 21:23