Gong L, Bogen S, Frey L, Jung W, Ryssel H (1992)
Publication Type: Journal article, other
Publication year: 1992
Publisher: IEEE Computer Society
Pages Range: 495-498
Journal Issue: 5435146,
ISBN: 0444894780
DOI: 10.1016/0167-9317(92)90482-7
The sum of two normalized Pearson IV distributions has been used for describing the high energy implantation profiles with boron and phosphorus into crystalline silicon. The required range parameters for this description were extracted by fitting them to experimental SIMS-profiles. The number of range parameters can be reduced to five for both of boron and phosphorus.
APA:
Gong, L., Bogen, S., Frey, L., Jung, W., & Ryssel, H. (1992). Simulation of high energy implantation profiles in crystalline silicon. Microelectronic Engineering, 5435146,, 495-498. https://dx.doi.org/10.1016/0167-9317(92)90482-7
MLA:
Gong, Li, et al. "Simulation of high energy implantation profiles in crystalline silicon." Microelectronic Engineering 5435146, (1992): 495-498.
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