Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance

Ristein J (1989)


Publication Type: Journal article

Publication year: 1989

Journal

Publisher: Elsevier

Book Volume: 114

Pages Range: 444

DOI: 10.1016/0022-3093(89)90612-1

Abstract

Defect spectroscopy with IR light of 1.17 eV photon energy surprisingly contradicts the commonly accepted assumption that singly occupied dangling bond states, D0, comprise the dominant deep defects in undoped a-Si:H films. Instead, evidence for a large concentration of diamagnetic states in dark equilibrium is found. They are at least three times more than the D0 states seen by dark ESR. D- states, possibly associated with the quartz interface of the films, are likely candidates for these defect states. © 1989.

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How to cite

APA:

Ristein, J. (1989). Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance. Journal of Non-Crystalline Solids, 114, 444. https://doi.org/10.1016/0022-3093(89)90612-1

MLA:

Ristein, Jürgen. "Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance." Journal of Non-Crystalline Solids 114 (1989): 444.

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