Optical mapping of aluminum doped p-type SiC wafers

Journal article


Publication Details

Author(s): Wellmann P, Straubinger T, Künecke U, Müller R, Sakwe A, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L, Camassel J
Journal: physica status solidi (a)
Publisher: John Wiley & Sons, Ltd / Academic Verlag GMBH
Publication year: 2005
Volume: 202
Journal issue: 4
Pages range: 598-601
ISSN: 1862-6300
eISSN: 0031-8965


Abstract


We discuss the application of optical techniques to address the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers; optical techniques are superior over their electrical counterparts in a sense that they are non-destructive. While absorption and birefringence mapping are powerful tools to determine the homogeneity of charge carrier concentration and defects in n-type SiC, respectively, the same methods fail in highly p-type doped SiC due to the opaque nature of the latter. Therefore reflective methods like Raman spectroscopy and low temperature photoluminescence have to be applied in order to address electronic properties by optical techniques. (c) 2005 WILEY-VCH Verlag GmbH W Co. KGaA, Weinheim.



FAU Authors / FAU Editors

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Institut National Polytechnique de Grenoble - Grenoble Institute of Technology
University of Montpellier / Université Montpellier


How to cite

APA:
Wellmann, P., Straubinger, T., Künecke, U., Müller, R., Sakwe, A., Pons, M.,... Camassel, J. (2005). Optical mapping of aluminum doped p-type SiC wafers. physica status solidi (a), 202(4), 598-601. https://dx.doi.org/10.1002/PSSA.200460436

MLA:
Wellmann, Peter, et al. "Optical mapping of aluminum doped p-type SiC wafers." physica status solidi (a) 202.4 (2005): 598-601.

BibTeX: 

Last updated on 2019-20-08 at 09:17