Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction

Journal article
(Original article)


Publication Details

Author(s): Hock R, Konias K, Perdicaro LMS, Magerl A, Hens P, Wellmann P
Journal: Materials Science Forum
Publication year: 2010
Volume: 645-648
Pages range: 29-32
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


We have investigated thermally induced strain in the SiC crystal lattice during physical vapor transport bulk growth. Using high energy x-ray diffraction lattice plane bending was observed in-situ during growth. With increasing growth rate increasing lattice plane bending and, hence, strain was observed. A comparison with numerical modeling of the growth process shows that the latter is related to the heat of crystallization which needs to be dissipated from the crystal growth front. The related temperature gradient as driving force for the dissipation of the heat of crystallization causes lattice plane bending. Optimization of the growth process needs to consider such effects.


FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Konias, Katja
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Hock, R., Konias, K., Perdicaro, L.M.S., Magerl, A., Hens, P., & Wellmann, P. (2010). Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction. Materials Science Forum, 645-648, 29-32. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.29

MLA:
Hock, Rainer, et al. "Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction." Materials Science Forum 645-648 (2010): 29-32.

BibTeX: 

Last updated on 2018-09-08 at 09:23