Hub C, Burkhardt M, Halik M, Tzvetkov G, Fink R (2010)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2010
Original Authors: Hub C., Burkhardt M., Halik M., Tzvetkov G., Fink R.
Publisher: Royal Society of Chemistry
Book Volume: 20
Pages Range: 4884-4887
Journal Issue: 23
DOI: 10.1039/c0jm00423e
Ultrathin pentacene-based organic field-effect transistors (OFETs) on commercially available silicon nitride membranes suitable for transmission X-ray experiments are demonstrated. The devices produced by high-vacuum deposition show excellent electronic performance ( = 0.6 cm V s, I = 10). STXM-experiments recorded with the PolLux microspectroscope correlate structural and electronic properties at highest spatial and spectral resolution while the OFET is operated. Local NEXAFS spectra are used to analyze the different orientations of the pentacene nanocrystals. Spectral changes due to modifications in the electronic structure during OFET operation can hardly be detected with the current setup. © The Royal Society of Chemistry 2010.
APA:
Hub, C., Burkhardt, M., Halik, M., Tzvetkov, G., & Fink, R. (2010). In situ STXM investigations of pentacene-based OFETs during operation. Journal of Materials Chemistry, 20(23), 4884-4887. https://doi.org/10.1039/c0jm00423e
MLA:
Hub, Christian, et al. "In situ STXM investigations of pentacene-based OFETs during operation." Journal of Materials Chemistry 20.23 (2010): 4884-4887.
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