Optimization of 4H-SiC photodiodes as selective UV sensors

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Matthus C, Burenkov A, Erlbacher T
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications Ltd
Jahr der Veröffentlichung: 2017
Heftnummer: 897
Seitenbereich: 622-625
ISBN: 9783035710434
ISSN: 0255-5476
eISSN: 1662-9752


Abstract


The spectral responsivity of 4H-SiC photodiodes was studied and optimized in this paper with the aim to realize UV photo-sensors, selectively sensitive either to harder or to softer UV radiation. The spectral selectivity of the SiC-photodiodes was achieved by optimizing doping profiles in the active regions of the photodiodes and of the anti-reflective coating. A shallow doping profile of the p-emitter allowed an enhancement of sensitivity for hard UV radiation. Deeper doping profiles were chosen for detection of softer UV radiation. The impact of the variations of the thickness of protective and anti-reflective layers was studied as well.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Erlbacher, Tobias PD Dr.
Technische Fakultät
Matthus, Christian
Lehrstuhl für Elektronische Bauelemente


Einrichtungen weiterer Autorinnen und Autoren

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


Zitierweisen

APA:
Matthus, C., Burenkov, A., & Erlbacher, T. (2017). Optimization of 4H-SiC photodiodes as selective UV sensors. Materials Science Forum, 897, 622-625. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.622

MLA:
Matthus, Christian, Alexander Burenkov, and Tobias Erlbacher. "Optimization of 4H-SiC photodiodes as selective UV sensors." Materials Science Forum 897 (2017): 622-625.

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Zuletzt aktualisiert 2018-07-11 um 20:50