Optimization of 4H-SiC photodiodes as selective UV sensors

Journal article
(Original article)


Publication Details

Author(s): Matthus C, Burenkov A, Erlbacher T
Journal: Materials Science Forum
Publisher: Trans Tech Publications Ltd
Publication year: 2017
Journal issue: 897
Pages range: 622-625
ISBN: 9783035710434
ISSN: 0255-5476
eISSN: 1662-9752


Abstract


The spectral responsivity of 4H-SiC photodiodes was studied and optimized in this paper with the aim to realize UV photo-sensors, selectively sensitive either to harder or to softer UV radiation. The spectral selectivity of the SiC-photodiodes was achieved by optimizing doping profiles in the active regions of the photodiodes and of the anti-reflective coating. A shallow doping profile of the p-emitter allowed an enhancement of sensitivity for hard UV radiation. Deeper doping profiles were chosen for detection of softer UV radiation. The impact of the variations of the thickness of protective and anti-reflective layers was studied as well.



FAU Authors / FAU Editors

Erlbacher, Tobias PD Dr.
Technische Fakultät
Matthus, Christian
Lehrstuhl für Elektronische Bauelemente


External institutions with authors

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


How to cite

APA:
Matthus, C., Burenkov, A., & Erlbacher, T. (2017). Optimization of 4H-SiC photodiodes as selective UV sensors. Materials Science Forum, 897, 622-625. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.622

MLA:
Matthus, Christian, Alexander Burenkov, and Tobias Erlbacher. "Optimization of 4H-SiC photodiodes as selective UV sensors." Materials Science Forum 897 (2017): 622-625.

BibTeX: 

Last updated on 2018-07-11 at 20:50