Optimization of 4H-SiC photodiodes as selective UV sensors
Matthus C, Burenkov A, Erlbacher T (2017)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2017
Journal
Publisher: Trans Tech Publications Ltd
Pages Range: 622-625
Journal Issue: 897
ISBN: 9783035710434
DOI: 10.4028/www.scientific.net/MSF.897.622
Abstract
The spectral responsivity of 4H-SiC photodiodes was studied and optimized in this paper with the aim to realize UV photo-sensors, selectively sensitive either to harder or to softer UV radiation. The spectral selectivity of the SiC-photodiodes was achieved by optimizing doping profiles in the active regions of the photodiodes and of the anti-reflective coating. A shallow doping profile of the p-emitter allowed an enhancement of sensitivity for hard UV radiation. Deeper doping profiles were chosen for detection of softer UV radiation. The impact of the variations of the thickness of protective and anti-reflective layers was studied as well.
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Germany (DE)How to cite
APA:
Matthus, C., Burenkov, A., & Erlbacher, T. (2017). Optimization of 4H-SiC photodiodes as selective UV sensors. Materials Science Forum, 897, 622-625. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.622
MLA:
Matthus, Christian, Alexander Burenkov, and Tobias Erlbacher. "Optimization of 4H-SiC photodiodes as selective UV sensors." Materials Science Forum 897 (2017): 622-625.
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