Anomalous Dirac point transport due to extended defects in bilayer graphene

Journal article

Publication Details

Author(s): Shallcross S, Sharma S, Weber HB
Journal: Nature Communications
Publication year: 2017
Volume: 8
Journal issue: 1
Pages range: 342
ISSN: 2041-1723
Language: English


Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered configurations of extended defects in the form of partial dislocations. In a large ensemble of bilayer systems with randomly positioned partial dislocations, the distribution of conductivities is found to be strongly peaked at both the insulating and metallic limits. We argue that this distribution form, that occurs only at the Dirac point, lies at the heart of the observation of both metallic and insulating states in bilayer graphene.

FAU Authors / FAU Editors

Shallcross, Sam, Ph.D.
Lehrstuhl für Theoretische Festkörperphysik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik

External institutions with authors

Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics

Research Fields

Lehrstuhl für Angewandte Physik
Materials and Light-Matter Interaction
Research focus area of a faculty: Naturwissenschaftliche Fakultät

How to cite

Shallcross, S., Sharma, S., & Weber, H.B. (2017). Anomalous Dirac point transport due to extended defects in bilayer graphene. Nature Communications, 8(1), 342.

Shallcross, Sam, Sangeeta Sharma, and Heiko B. Weber. "Anomalous Dirac point transport due to extended defects in bilayer graphene." Nature Communications 8.1 (2017): 342.


Last updated on 2018-11-08 at 02:55

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