Anomalous Dirac point transport due to extended defects in bilayer graphene

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Details zur Publikation

Autor(en): Shallcross S, Sharma S, Weber HB
Zeitschrift: Nature Communications
Jahr der Veröffentlichung: 2017
Band: 8
Heftnummer: 1
Seitenbereich: 342
ISSN: 2041-1723
Sprache: Englisch


Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered configurations of extended defects in the form of partial dislocations. In a large ensemble of bilayer systems with randomly positioned partial dislocations, the distribution of conductivities is found to be strongly peaked at both the insulating and metallic limits. We argue that this distribution form, that occurs only at the Dirac point, lies at the heart of the observation of both metallic and insulating states in bilayer graphene.

FAU-Autoren / FAU-Herausgeber

Shallcross, Sam
Lehrstuhl für Theoretische Festkörperphysik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik

Autor(en) der externen Einrichtung(en)
Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics


Shallcross, S., Sharma, S., & Weber, H.B. (2017). Anomalous Dirac point transport due to extended defects in bilayer graphene. Nature Communications, 8(1), 342.

Shallcross, Sam, Sangeeta Sharma, and Heiko B. Weber. "Anomalous Dirac point transport due to extended defects in bilayer graphene." Nature Communications 8.1 (2017): 342.


Zuletzt aktualisiert 2018-11-08 um 02:55