The physics of hydrogen-terminated diamond surfaces

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autorinnen und Autoren: Ristein J
Zeitschrift: AIP Conference Proceedings
Verlag: American Institute of Physics
Jahr der Veröffentlichung: 2005
Band: 772
Seitenbereich: 377
ISSN: 0094-243X
eISSN: 1551-7616


The termination of the surface dangling bonds of a semiconductor by chemical bonds is a key feature which determines the surface band diagram and the electronic properties related with it. In the case of diamond as the only representative of an elemental wide band gap semiconductor, the termination by monovalent hydrogen atoms leads to particularly interesting properties of its surfaces. Firstly it is ideal to remove (donor-like) surface states from the gap, secondly it creates a true negative electron affinity, and thirdly it makes the material susceptible to an unusual type of transfer doping where holes are injected by acceptors located at the surface instead of inside the host lattice. All of these effects are, directly or indirectly, brought about by the termination of the surface carbon atoms by the covalent but polar bonds with hydrogen. They can thus be tailored by gradually replacing the terminating hydrogen by oxygen bonds with opposite polarity. This makes diamond a material with a tremendous variability in its electronic surface properties. © 2005 American Institute of Physics.

FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik


Ristein, J. (2005). The physics of hydrogen-terminated diamond surfaces. AIP Conference Proceedings, 772, 377.

Ristein, Jürgen. "The physics of hydrogen-terminated diamond surfaces." AIP Conference Proceedings 772 (2005): 377.


Zuletzt aktualisiert 2019-16-07 um 15:33