Ohmic and rectifying contacts on bulk AlN for radiation detector applications
Erlbacher T, Bickermann M, Kallinger B, Meissner E, Bauer A, Frey L (2012)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2012
Journal
Book Volume: 9
Pages Range: 968-971
Abstract
In this paper we report on ohmic and rectifying contacts fabricated on undoped bulk AlN substrates for radiation detector applications. The ohmic Ni contacts exhibit negligible contact resistances. Current conduction is dominated by field enhanced thermal emission from traps 0.4 to 0.6 eV below the conduction band. The Pt Schottky contacts show excellent rectifying behaviour. In forward conduction, device current is again limited by the Poole-Frenkel effect. The Schottky barrier features very low reverse leakage currents, and voltages of up to -200 V can be applied. The capability of bulk AlN for radiation detectors at room temperature is demonstrated. Suitability is deduced from both X-ray absorption experiments and low reverse leakage currents of the fabricated Schottky diodes. Additionally, the AlN substrate is almost blind to sun light due to its wide band gap. Still, reduction of recombination sites in AlN is required to achieve maximum detector performance. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Germany (DE)How to cite
APA:
Erlbacher, T., Bickermann, M., Kallinger, B., Meissner, E., Bauer, A., & Frey, L. (2012). Ohmic and rectifying contacts on bulk AlN for radiation detector applications. Physica Status Solidi (C) Current Topics in Solid State Physics, 9, 968-971. https://dx.doi.org/10.1002/pssc.201100341
MLA:
Erlbacher, Tobias, et al. "Ohmic and rectifying contacts on bulk AlN for radiation detector applications." Physica Status Solidi (C) Current Topics in Solid State Physics 9 (2012): 968-971.
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