High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors

Oertel S, Jank M, Teuber E, Bauer A, Frey L (2014)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2014

Journal

Book Volume: 553

Pages Range: 114-117

DOI: 10.1016/j.tsf.2013.11.061

Abstract

The synthesis of versatile, and non-toxic precursors for ambient-air deposition of semiconducting metal-oxide thin films by spray pyrolysis is reported. The resulting thin films yield stable and reproducible performance in thin-film transistors. The precursors are based on reactions of metal salts and an organic ammonium source in water. The precursor preparation is highly versatile with respect to low-level handling requirements (i.e. in air) and miscibility for the synthesis of customized mixed metal oxides. The precursor solutions are deposited by spray pyrolysis and integrated into bottom-gate test structures with staggered source and drain contacts. Indium zinc oxide thin films deposited from a precursor with an [In]/[Zn] ratio of 3:1 exhibit an on-off current ratio of 10 with a calculated saturation mobility of 14.1 cm V s ± 1.1 cm V s at a drain voltage of 40 V. The demonstrated route to non-toxic molecular precursors for low-temperature thin-film processing in ambient atmosphere benefits from low cost of educts, environmentally friendly solvents, minimized health risk when compared to nanoparticle processing, and an excellent performance for electronic applications. © 2013 Elsevier B.V. All rights reserved.

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APA:

Oertel, S., Jank, M., Teuber, E., Bauer, A., & Frey, L. (2014). High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors. Thin Solid Films, 553, 114-117. https://dx.doi.org/10.1016/j.tsf.2013.11.061

MLA:

Oertel, Susanne, et al. "High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors." Thin Solid Films 553 (2014): 114-117.

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