A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes

Brabec C, Winder C, Sariciftci NS, Hummelen J, Dhanabalan A, van Hal P, Janssen RAJ (2002)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2002

Journal

Book Volume: 12

Pages Range: 709-712

Journal Issue: 10

DOI: 10.1002/1616-3028(20021016)12:10<709::AID-ADFM709>3.0.CO;2-N

Abstract

A novel low-bandgap conjugated polymer (PTPTB, E = ∼1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2′-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, is introduced for thin-film optoelectronic devices working in the near infrared (NIR). Bulk heterojunction photovoltaic cells from solid-state composite films of PTPTB with the soluble fullerene derivative [6,6]-phenyl C butyric acid methyl ester (PCBM) as an active layer shows promising power conversion efficiencies up to 1% under AM1.5 illumination. Furthermore, electroluminescent devices (light-emitting diodes) from thin films of pristine PTPTB show near infrared emission peaking at 800 nm with a turn on voltage below 4 V. The electroluminescence can be significantly enhanced by sensitization of this material with a wide bandgap material such as the poly(p-phenylene vinylene) derivative MDMO-PPV.

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How to cite

APA:

Brabec, C., Winder, C., Sariciftci, N.S., Hummelen, J., Dhanabalan, A., van Hal, P., & Janssen, R.A.J. (2002). A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes. Advanced Functional Materials, 12(10), 709-712. https://dx.doi.org/10.1002/1616-3028(20021016)12:10<709::AID-ADFM709>3.0.CO;2-N

MLA:

Brabec, Christoph, et al. "A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes." Advanced Functional Materials 12.10 (2002): 709-712.

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