Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme

Journal article


Publication Details

Author(s): Liu X, Wegener CM, Polster S, Jank M, Roosen A, Frey L
Journal: Journal of Display Technology
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Publication year: 2016
Volume: 12
Journal issue: 3
ISSN: 1551-319X


Abstract


We report for the first time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-film transistors (TFTs) in this Ag/ITO contact configuration show improved saturation mobility of 0.53 cm(2) . V-1 . s(-1) with respect to 0.08 cm(2) . V-1 . s(-1) without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.



FAU Authors / FAU Editors

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Roosen, Andreas Prof. Dr.-Ing.
Lehrstuhl für Werkstoffwissenschaften (Glas und Keramik)
Wegener, Carsten Moritz
Professur für Werkstoffwissenschaften (Funktionskeramik)


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Liu, X., Wegener, C.M., Polster, S., Jank, M., Roosen, A., & Frey, L. (2016). Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme. Journal of Display Technology, 12(3). https://dx.doi.org/10.1109/JDT.2015.2445378

MLA:
Liu, XinXin, et al. "Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme." Journal of Display Technology 12.3 (2016).

BibTeX: 

Last updated on 2018-19-04 at 03:57