Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization
Matthus C, Erlbacher T, Burenkov A, Bauer A, Frey L (2016)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2016
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 858
Pages Range: 1032-1035
ISBN: 9783035710427
DOI: 10.4028/www.scientific.net/MSF.858.1032
Abstract
This paper describes the fabrication, characterization, and simulation of 4H-SiC pinphotodiodes for solar UV radiation detection. The devices were produced with an aluminum implanted emitter unlike most previously published detectors which use epitaxy for all applied doping regions (see e.g. [1,2]). They were electrically characterized at different temperatures with and without UV-illumination and afterwards a spectral analysis of the photocurrent was performed. A quantum efficiency up to 55% at 260 nm will be shown. Furthermore, the capability of the diodes for visible blind sun UV monitoring e.g. within a building, is demonstrated.
Authors with CRIS profile
Christian Matthus
Lehrstuhl für Elektronische Bauelemente
Tobias Erlbacher
Lehrstuhl für Elektronische Bauelemente
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Related research project(s)
Involved external institutions
Germany (DE)How to cite
APA:
Matthus, C., Erlbacher, T., Burenkov, A., Bauer, A., & Frey, L. (2016). Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization. Materials Science Forum, 858, 1032-1035. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.1032
MLA:
Matthus, Christian, et al. "Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization." Materials Science Forum 858 (2016): 1032-1035.
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