The role of defects in the dissociative adsorption of CO on Ni(100)
Steinrück HP, D'Evelyn M, Madix R (1986)
Publication Type: Journal article, Original article
Publication year: 1986
Journal
Original Authors: Steinrück H.P., D'Evelyn M.P., Madix R.J.
Publisher: Elsevier
Book Volume: 172
Journal Issue: 3
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-0001483665&origin=inward
Abstract
We present a molecular beam study on the dissociative sticking coefficient for CO on a Ni(100) surface. In the range from 1.6 to 20 kcal/mol the observed dissociative sticking coefficient at a surface temperature of 500 K is 0.02 and independent of beam energy. Investigations on a sputter-damaged surface result in a sticking coefficient of 0.40, again independent of beam energy. The observed behavior can be explained by CO dissociation at defect sites. © 1986.
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APA:
Steinrück, H.-P., D'Evelyn, M., & Madix, R. (1986). The role of defects in the dissociative adsorption of CO on Ni(100). Surface Science, 172(3).
MLA:
Steinrück, Hans-Peter, M.P. D'Evelyn, and R.J. Madix. "The role of defects in the dissociative adsorption of CO on Ni(100)." Surface Science 172.3 (1986).
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