Energy level alignment at zinc blende Cd(Mn)Se/ZnTe/InAs(100) interfaces

Gleim T, Weinhardt L, Schmidt T, Fink R, Heske C, Umbach E, Grabs P, Schmidt G, Molenkamp L, Richter B, Fleszar A, Steinrück HP (2002)

Publication Type: Journal article

Publication year: 2002

Journal

Applied Physics Letters American Institute of Physics (AIP)

Original Authors: Gleim Th., Weinhardt L., Schmidt Th., Fink R., Heske C., Umbach E., Grabs P., Schmidt G., Molenkamp L.W., Richter B., Fleszar A., Steinrück H.-P.

Publisher: American Institute of Physics (AIP)

Book Volume: 81

Pages Range: 3813-3815

Journal Issue: 20

DOI: 10.1063/1.1519964

Abstract

Experimentally determined band offsets of the CdSe/ZnTe/InAs(100) semiconductor heterostructures were presented. The semimagnetic system showed to behave very similar to the Mn-free model system. A stepwise alignment of the valence bands and in the ZnTe interlayer a 1.1 eV conduction band tunnel barrier were found.

Authors with CRIS profile

Rainer Fink Professur für Physikalische Chemie Hans-Peter Steinrück Lehrstuhl für Physikalische Chemie II

Involved external institutions

Julius-Maximilians-Universität Würzburg DE Germany (DE) Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI) DE Germany (DE)

How to cite

APA:

Gleim, T., Weinhardt, L., Schmidt, T., Fink, R., Heske, C., Umbach, E.,... Steinrück, H.-P. (2002). Energy level alignment at zinc blende Cd(Mn)Se/ZnTe/InAs(100) interfaces. Applied Physics Letters, 81(20), 3813-3815. https://dx.doi.org/10.1063/1.1519964

MLA:

Gleim, Thomas, et al. "Energy level alignment at zinc blende Cd(Mn)Se/ZnTe/InAs(100) interfaces." Applied Physics Letters 81.20 (2002): 3813-3815.

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