Growth and thermoelectric properties of nitrogen-doped diamond/graphite

Journal article
(Original article)


Publication Details

Author(s): Haase A, Peters A, Rosiwal S
Journal: Diamond and Related Materials
Publisher: Elsevier Ltd
Publication year: 2016
Volume: 63
Pages range: 222-226
ISSN: 0925-9635
Language: English


Abstract


To investigate the growth and the thermoelectric properties of nitrogen-doped diamond, samples were grown by microwave plasma chemical vapor deposition with varying nitrogen flows as well as with a high nitrogen flow and varying methane flows. The samples were characterized according to their morphology, phase composition, electrical conductivity, and Seebeck coefficient. It was found that an increased nitrogen flow leads to a higher fraction of sp-bond carbon. Furthermore, a structure consisting of graphene nanowalls which exhibits many cavities is created. For nitrogen flows above 70 sccm, the electrical conductivity increases abruptly and significantly from less than 0.3s/m to more than 4.3s/m. A lower methane flow inverts this development. It was not possible to find a clear dependency of the Seebeck coefficient on the nitrogen flow. Seebeck coefficients were measured between -17μV/K at 23°C and -34μV/K at 110°C.



FAU Authors / FAU Editors

Haase, Armin
Lehrstuhl für Werkstoffwissenschaften (Werkstoffkunde und Technologie der Metalle)
Rosiwal, Stefan PD Dr.-Ing.
Lehrstuhl für Werkstoffwissenschaften (Werkstoffkunde und Technologie der Metalle)


How to cite

APA:
Haase, A., Peters, A., & Rosiwal, S. (2016). Growth and thermoelectric properties of nitrogen-doped diamond/graphite. Diamond and Related Materials, 63, 222-226. https://dx.doi.org/10.1016/j.diamond.2015.10.023

MLA:
Haase, Armin, Alexandra Peters, and Stefan Rosiwal. "Growth and thermoelectric properties of nitrogen-doped diamond/graphite." Diamond and Related Materials 63 (2016): 222-226.

BibTeX: 

Last updated on 2018-13-06 at 02:23