Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors

Journal article
(Report)


Publication Details

Author(s): Khassanov A, Schmaltz T, Steinrück HP, Magerl A, Hirsch A, Halik M
Journal: Advanced Materials Interfaces
Publication year: 2014
Volume: 1
Journal issue: 9
Pages range: n/a
ISSN: 2196-7350


Abstract

Mixed self-assembled monolayers of C60-functionalized and different long-chained insulating phosphonic acids provide molecular scale non-volatile memory dielectrics for low-voltage organic thin-film transistors. The memory retention depends on the insulation of the C60 moiety and can be improved by embedding into the insulating SAM matrix and covering by corresponding insulating molecules.


FAU Authors / FAU Editors

Halik, Marcus Prof. Dr.
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Hirsch, Andreas Prof. Dr.
Lehrstuhl für Organische Chemie II
Khassanov, Artöm
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Schmaltz, Thomas
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Steinrück, Hans-Peter Prof. Dr.
Lehrstuhl für Physikalische Chemie II


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


Research Fields

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials
A2 Nanoanalysis and Microscopy
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Khassanov, A., Schmaltz, T., Steinrück, H.-P., Magerl, A., Hirsch, A., & Halik, M. (2014). Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors. Advanced Materials Interfaces, 1(9), n/a. https://dx.doi.org/10.1002/admi.201400238

MLA:
Khassanov, Artöm, et al. "Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors." Advanced Materials Interfaces 1.9 (2014): n/a.

BibTeX: 

Last updated on 2018-10-08 at 14:08