Self-Assembled Monolayer Exchange Reactions as a Tool for Channel Interface Engineering in Low-Voltage Organic Thin-Film Transistors

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Details zur Publikation

Autorinnen und Autoren: Lenz T, Schmaltz T, Novak M, Halik M
Zeitschrift: Langmuir
Jahr der Veröffentlichung: 2012
Band: 28
Heftnummer: 39
Seitenbereich: 13900-13904
ISSN: 0743-7463
eISSN: 1520-5827
Sprache: Englisch


Abstract

In this work, we compared the kinetics of monolayer self-assembly long-chained carboxylic acids and phosphonic acids on thin aluminum oxide surfaces and investigated their dielectric properties in capacitors and low-voltage organic thin-film transistors. Phosphonic acid anchor groups tend to substitute carboxylic acid molecules on aluminum oxide surfaces and thus allow the formation of mixed or fully exchanged monolayers. With different alkyl chain substituents (n-alkyl or fluorinated alkyl chains), the exchange reaction can be monitored as a function of time by static contact angle measurements. The threshold voltage in α,α′-dihexyl-sexithiophene thin-film transistors composed of such mixed layer dielectrics correlates with the exchange progress and can be tuned from negative to positive values or vice versa depending on the dipole moment of the alkyl chain substituents. The change in the dipole moment with increasing exchange time also shifts the capacitance of these devices. The rate constants for exchange reactions determined by the time-dependent shift of static contact angle, threshold voltage, and capacitance exhibit virtually the same value thus proving the exchange kinetics to be highly controllable. In general, the exchange approach is a powerful tool in interface engineering, displaying a great potential for tailoring of device characteristics.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Halik, Marcus Prof. Dr.
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Lenz, Thomas
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Schmaltz, Thomas
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Forschungsbereiche

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Lenz, T., Schmaltz, T., Novak, M., & Halik, M. (2012). Self-Assembled Monolayer Exchange Reactions as a Tool for Channel Interface Engineering in Low-Voltage Organic Thin-Film Transistors. Langmuir, 28(39), 13900-13904. https://dx.doi.org/10.1021/la3027978

MLA:
Lenz, Thomas, et al. "Self-Assembled Monolayer Exchange Reactions as a Tool for Channel Interface Engineering in Low-Voltage Organic Thin-Film Transistors." Langmuir 28.39 (2012): 13900-13904.

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Zuletzt aktualisiert 2019-23-08 um 09:17