Fabrication of genuine single-quantum-dot light-emitting diodes

Journal article
(Original article)

Publication Details

Author(s): Schmidt R, Scholz U, Vitzthum M, Fix R, Metzner C, Kailuweit P, Reuter D, Wieck A, Hübner M, Stufler S, Zrenner A, Malzer S, Döhler G
Journal: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publication year: 2006
Volume: 88
Journal issue: 12
ISSN: 0003-6951


We present a simple approach for the fabrication of genuine single quantum-dot light-emitting diodes. A submicron wide bottom contact stripe is formed by focused ion beam implantation doping into a GaAs buffer layer. Successive overgrowth with a thin intrinsic layer incorporating self-assembled InAs quantum dots, followed by a top contact layer of complementary doping type and standard photolithographic processing, allows for electrical cross sections in the sub- μ m range. In devices with sufficiently low dot densities, only one single dot is expected to be electrically addressed. Both the observed current versus voltage characteristics and the evolution of the electroluminescence spectra as a function of applied voltage clearly demonstrate that this goal has been achieved. © 2006 American Institute of Physics.

FAU Authors / FAU Editors

Malzer, Stefan Dr.
Institut für Physik der Kondensierten Materie
Metzner, Claus PD Dr.
Lehrstuhl für Biophysik

External institutions
Ruhr-Universität Bochum (RUB)
Universität Paderborn

How to cite

Schmidt, R., Scholz, U., Vitzthum, M., Fix, R., Metzner, C., Kailuweit, P.,... Döhler, G. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters, 88(12). https://dx.doi.org/10.1063/1.2188057

Schmidt, Ralf, et al. "Fabrication of genuine single-quantum-dot light-emitting diodes." Applied Physics Letters 88.12 (2006).


Last updated on 2019-18-04 at 21:50