Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)

Arora A, Gosh S, Arora BM, Malzer S, Döhler G (2010)

Publication Type: Journal article, Original article

Publication year: 2010

Journal

Applied Physics Letters American Institute of Physics (AIP)

Original Authors: Arora A., Ghosh S., Arora B.M., Malzer S., Dohler G.

Publisher: American Institute of Physics (AIP)

Book Volume: 97

Article Number: 081902

Journal Issue: 8

DOI: 10.1063/1.3479501

Abstract

Polarization-resolved lateral-photoconductivity measurements are reported on device structures made of GaAs/ Al Ga As quantum wells sandwiched between low-temperature grown GaAs(001) layers. The mesa device structures have long length (3 mmy) and narrow width (10 and 20 μmx) in the (001) plane. For light incident along [001], the ground state light-hole exciton transition is much stronger for light polarization Ex, compared to Ey. The heavy-hole exciton transition shows a weaker polarization anisotropy of opposite sign, being stronger for Ey. Through calculations based on the Bir-Pikus Hamiltonian, the observed in-plane optical polarization anisotropy is shown to arise from valence band mixing induced by anisotropic strain in the plane of quantum wells. © 2010 American Institute of Physics.

Authors with CRIS profile

Stefan Malzer Institut für Physik der Kondensierten Materie

Involved external institutions

Tata Institute of Fundamental Research (TIFR) IN India (IN) Department of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research IN India (IN)

How to cite

APA:

Arora, A., Gosh, S., Arora, B.M., Malzer, S., & Döhler, G. (2010). Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001). Applied Physics Letters, 97(8). https://dx.doi.org/10.1063/1.3479501

MLA:

Arora, Ashish, et al. "Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)." Applied Physics Letters 97.8 (2010).

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