Efficient III-V tunneling diodes with ErAs recombination centers

Preu S, Malzer S, Döhler G, Lu H, Gossard A, Wang L (2010)


Publication Type: Journal article, Original article

Publication year: 2010

Journal

Original Authors: Preu S., Malzer S., Dohler G.H., Lu H., Gossard A.C., Wang L.J.

Publisher: Institute of Physics: Hybrid Open Access

Book Volume: 25

Article Number: 115004

Journal Issue: 11

DOI: 10.1088/0268-1242/25/11/115004

Abstract

We report on recombination diodes containing monolayer depositions of ErAs between highly doped n- and p-layers in the (Al)GaAs and In(Al)GaAs material system. The ErAs material provides metallic states across the band gap of the host semiconductor that act as efficient recombination centers. Both electrons and holes can tunnel into the ErAs, resulting in extremely high tunneling current densities in the tens of kA cm range. A device resistance area product of 1-2 × 10 Ω cm at low bias (±0.2 V) has been measured. Measurements on In(Al)GaAs and (Al)GaAs diodes will be compared to a simple theoretical model. Low band gap and high (p-) doping levels are identified as key parameters for achieving highest recombination currents. Compared to ErAs-free diodes, ErAs-enhanced recombination diodes provide orders of magnitude higher current densities at both moderate and low forward and reverse bias. This is attributed to the smaller and narrower tunnel barriers from the n- and p-layers into the ErAs compared to tunneling from the n- to the p-side through the whole depletion region. © 2010 IOP Publishing Ltd.

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APA:

Preu, S., Malzer, S., Döhler, G., Lu, H., Gossard, A., & Wang, L. (2010). Efficient III-V tunneling diodes with ErAs recombination centers. Semiconductor Science and Technology, 25(11). https://dx.doi.org/10.1088/0268-1242/25/11/115004

MLA:

Preu, Sascha, et al. "Efficient III-V tunneling diodes with ErAs recombination centers." Semiconductor Science and Technology 25.11 (2010).

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