Quantifying eigenstrain distributions induced by focused ion beam damage in silicon

Journal article
(Original article)


Publication Details

Author(s): Korsunsky A, Guenole J, Salvati E, Sui T, Mousavi M, Prakash A, Bitzek E
Journal: Materials Letters
Publisher: Elsevier B.V.
Publication year: 2016
Volume: 185
Pages range: 47-49
ISSN: 1873-4979
Language: English


Abstract


Eigenstrain offers a versatile generic framework for the description of inelastic deformation that acts as the source of residual stresses. Focused ion beam (FIB) milling used for nanoscale machining is accompanied by target material modification by ion beam damage having residual stress consequences that can be described in terms of eigenstrain. Due to the lack of direct means of experimental determination of residual stress or eigenstrain at the nanoscale we adopt a hybrid approach that consists of eigenstrain abstraction from molecular dynamics simulation, its application within a finite element simulation of a flexible silicon cantilever, and satisfactory comparison of the prediction with experimental observation. Directions for further enquiry are briefly discussed.



FAU Authors / FAU Editors

Bitzek, Erik Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Simulation und Werkstoffeigenschaften)
Guenole, Julien Dr.
Lehrstuhl für Werkstoffwissenschaften (Allgemeine Werkstoffeigenschaften)
Prakash, Aruna Dr.
Lehrstuhl für Werkstoffwissenschaften (Allgemeine Werkstoffeigenschaften)


External institutions with authors

University of Oxford


How to cite

APA:
Korsunsky, A., Guenole, J., Salvati, E., Sui, T., Mousavi, M., Prakash, A., & Bitzek, E. (2016). Quantifying eigenstrain distributions induced by focused ion beam damage in silicon. Materials Letters, 185, 47-49. https://dx.doi.org/10.1016/j.matlet.2016.08.111

MLA:
Korsunsky, Alexander, et al. "Quantifying eigenstrain distributions induced by focused ion beam damage in silicon." Materials Letters 185 (2016): 47-49.

BibTeX: 

Last updated on 2018-20-11 at 20:50