A 77-GHz Down-Conversion Mixer Architecture with Built-In Test Capability in SiGe Technology

Conference contribution


Publication Details

Author(s): Kissinger D, Knapp H, Maurer L, Weigel R
Publisher: IEEE
Publication year: 2010
Conference Proceedings Title: Bipolar/BiCMOS Circuits and Technology Meeting
Pages range: 200-203


Abstract

A 77-GHz double-balanced mixer in a 200 GHz ft silicon-germanium technology is presented. The proposed mixer architecture is capable of simultaneous direct up- and down-conversion of two separate input signals without additional power consumption. An up-converted low-frequency test signal is coupled back into the receiver RF input path to enable a built-in functionality test of the down-conversion path of the mixer. The circuit exhibits a conversion gain of 20 dB and draws 22mA from a 3.3V supply. The fabricated chip occupies an area of 1028 × 1128μm2.


FAU Authors / FAU Editors

Kissinger, Dietmar Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik
Weigel, Robert Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik


External institutions with authors

Universität der Bundeswehr München


How to cite

APA:
Kissinger, D., Knapp, H., Maurer, L., & Weigel, R. (2010). A 77-GHz Down-Conversion Mixer Architecture with Built-In Test Capability in SiGe Technology. In Bipolar/BiCMOS Circuits and Technology Meeting (pp. 200-203). Austin, TX: IEEE.

MLA:
Kissinger, Dietmar, et al. "A 77-GHz Down-Conversion Mixer Architecture with Built-In Test Capability in SiGe Technology." Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Austin, TX IEEE, 2010. 200-203.

BibTeX: 

Last updated on 2018-10-08 at 13:23