A 77-GHz Down-Conversion Mixer Architecture with Built-In Test Capability in SiGe Technology
Kissinger D, Knapp H, Maurer L, Weigel R (2010)
Publication Type: Conference contribution
Publication year: 2010
Publisher: IEEE
Pages Range: 200-203
Conference Proceedings Title: Bipolar/BiCMOS Circuits and Technology Meeting
Event location: Austin, TX
DOI: 10.1109/BIPOL.2010.5668040
Abstract
A 77-GHz double-balanced mixer in a 200 GHz ft silicon-germanium technology is presented. The proposed mixer architecture is capable of simultaneous direct up- and down-conversion of two separate input signals without additional power consumption. An up-converted low-frequency test signal is coupled back into the receiver RF input path to enable a built-in functionality test of the down-conversion path of the mixer. The circuit exhibits a conversion gain of 20 dB and draws 22mA from a 3.3V supply. The fabricated chip occupies an area of 1028 × 1128μm2.
Authors with CRIS profile
Dietmar Kissinger
Lehrstuhl für Technische Elektronik
Robert Weigel
Lehrstuhl für Technische Elektronik
Involved external institutions
Germany (DE)How to cite
APA:
Kissinger, D., Knapp, H., Maurer, L., & Weigel, R. (2010). A 77-GHz Down-Conversion Mixer Architecture with Built-In Test Capability in SiGe Technology. In Bipolar/BiCMOS Circuits and Technology Meeting (pp. 200-203). Austin, TX: IEEE.
MLA:
Kissinger, Dietmar, et al. "A 77-GHz Down-Conversion Mixer Architecture with Built-In Test Capability in SiGe Technology." Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Austin, TX IEEE, 2010. 200-203.
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