Peukert W, Stanzel M, Kunzmann A, Guldi DM, Costa Riquelme RD (2016)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2016
Publisher: Wiley-VCH Verlag
Book Volume: 6
Article Number: 1501075
Journal Issue: 1
The benefits of incorporating binary metal-oxide electrodes en route toward efficient dye-sensitized solar cells (DSSCs) have recently emerged. The current work aims at realizing efficient indium-doped zinc oxide based DSSCs by means of enhancing charge transport processes and reducing recombination rates. Electrochemical impedance spectroscopic assays corroborate that low amounts of indium reduce charge transport resistances and increase electron recombination resistances. The latter are in concert with a remarkable enhancement of the charge collection efficiency from 33% to 83% for devices with ZnO and InZnO photoanodes, respectively. Going beyond 15 mol% of indium, an effective electron trapping increases the charge transport resistance and, in turn, dramatically reduces charge collection efficiency. Upon implementing InZnO into an electron cascade photoanode architecture featuring an InZnO bottom layer and a ZnO top layer, a device efficiency of 5.77% and a significantly high current density of 20.4 mA cm in binary ZnO DSSCs are achieved.
APA:
Peukert, W., Stanzel, M., Kunzmann, A., Guldi, D.M., & Costa Riquelme, R.D. (2016). Binary Indium-Zinc Oxide Photoanodes for Efficient Dye-Sensitized Solar Cells. Advanced Energy Materials, 6(1). https://dx.doi.org/10.1002/aenm.201501075
MLA:
Peukert, Wolfgang, et al. "Binary Indium-Zinc Oxide Photoanodes for Efficient Dye-Sensitized Solar Cells." Advanced Energy Materials 6.1 (2016).
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