Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
Matthus C, Hürner A, Erlbacher T, Bauer AJ, Frey L (2018)
Publication Language: English
Publication Type: Journal article, Review article
Publication year: 2018
Journal
Pages Range: 101-105
Journal Issue: Volume 144
DOI: 10.1016/j.sse.2018.03.010
Abstract
In this study, the influence of the emitter efficiency on the forward current–voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.
Authors with CRIS profile
Christian Matthus
Lehrstuhl für Elektronische Bauelemente
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Germany (DE)How to cite
APA:
Matthus, C., Hürner, A., Erlbacher, T., Bauer, A.J., & Frey, L. (2018). Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes. Solid-State Electronics, Volume 144, 101-105. https://dx.doi.org/10.1016/j.sse.2018.03.010
MLA:
Matthus, Christian, et al. "Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes." Solid-State Electronics Volume 144 (2018): 101-105.
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