Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles

Nugraha MI, Matsui H, Bisri SZ, Sytnyk M, Heiß W, Loi MA, Takeya J, Heiß W (2016)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2016

Journal

APL Materials American Institute of Physics

Publisher: American Institute of Physics Inc.

Book Volume: 4

Article Number: 116105

Journal Issue: 11

DOI: 10.1063/1.4966208

Abstract

We study the effect of self-assembled monolayer (SAM) treatment of the SiO dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.

Authors with CRIS profile

Mykhailo Sytnyk Institute Materials for Electronics and Energy Technology (i-MEET) Wolfgang Heiß Department Werkstoffwissenschaften

Involved external institutions

University of Tokyo

Japan (JP) University of Groningen / Rijksuniversiteit Groningen

Netherlands (NL)

How to cite

APA:

Nugraha, M.I., Matsui, H., Bisri, S.Z., Sytnyk, M., Heiß, W., Loi, M.A.,... Heiß, W. (2016). Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles. APL Materials, 4(11). https://dx.doi.org/10.1063/1.4966208

MLA:

Nugraha, Mohamad I., et al. "Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles." APL Materials 4.11 (2016).

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