Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles

Journal article
(Original article)


Publication Details

Author(s): Nugraha MI, Matsui H, Bisri SZ, Sytnyk M, Heiß W, Loi MA, Takeya J, Heiß W
Journal: APL Materials
Publisher: American Institute of Physics Inc.
Publication year: 2016
Volume: 4
Journal issue: 11
ISSN: 2166-532X
Language: English


Abstract


We study the effect of self-assembled monolayer (SAM) treatment of the SiO dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.



FAU Authors / FAU Editors

Heiß, Wolfgang Prof. Dr.
Department Werkstoffwissenschaften
Heiß, Wolfgang Prof. Dr.
Professur für Werkstoffwissenschaften (lösungsprozessierte Halbleitermaterialien)
Sytnyk, Mykhailo
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)


How to cite

APA:
Nugraha, M.I., Matsui, H., Bisri, S.Z., Sytnyk, M., Heiß, W., Loi, M.A.,... Heiß, W. (2016). Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles. APL Materials, 4(11). https://dx.doi.org/10.1063/1.4966208

MLA:
Nugraha, Mohamad I., et al. "Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles." APL Materials 4.11 (2016).

BibTeX: 

Last updated on 2018-19-04 at 03:43