Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells

Journal article
(Original article)


Publication Details

Author(s): Wang H, Li N, Güldal NS, Brabec C
Journal: Organic Electronics
Publication year: 2012
Volume: 13
Journal issue: 12
Pages range: 3014-3021
ISSN: 1566-1199
Language: English


Abstract


Nanocrystal VO dispersion processed thin films are introduced as efficient hole extraction interlayer in normal architecture P3HT:PCBM solar cells. Both thin and rather thick interlayers are studied and demonstrated to work properly in organic photovoltaic. Nanocrystal V OVO layers effectively block electrons and effectively extract holes at the ITO anode. Very constant and high V (above 0.56 V) are easily achieved. Comparable J and PCE are demonstrated for nanocrystal dispersion-processed devices when compared with amorphous sol-gel processed devices. The excellent functionality of nanocrystal VO interlayers in Si-PCPDTBT:PCBM devices further demonstrates the broad application potential of this material class for photovoltaic applications. © 2012 Elsevier B.V. All rights reserved.



FAU Authors / FAU Editors

Brabec, Christoph Prof. Dr.
Institute Materials for Electronics and Energy Technology (i-MEET)
Güldal, Nusret Sena
Institute Materials for Electronics and Energy Technology (i-MEET)
Li, Ning Dr.-Ing.
Institute Materials for Electronics and Energy Technology (i-MEET)
Wang, Hao
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)


How to cite

APA:
Wang, H., Li, N., Güldal, N.S., & Brabec, C. (2012). Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells. Organic Electronics, 13(12), 3014-3021. https://dx.doi.org/10.1016/j.orgel.2012.08.007

MLA:
Wang, Hao, et al. "Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells." Organic Electronics 13.12 (2012): 3014-3021.

BibTeX: 

Last updated on 2018-08-12 at 20:50