Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon: A Versatile Platform for Modern Optoelectronic Materials

Schmitt SW, Sarau G, Speich C, Doehler GH, Liu Z, Hao X, Rechberger S, Dieker C, Spiecker E, Prost W, Tegude FJ, Conibeer G, Green MA, Christiansen S (2018)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2018

Journal

Advanced Optical Materials Wiley

Publisher: Wiley-VCH Verlag

DOI: 10.1002/adom.201701329

Abstract

Metal organic vapor phase epitaxy is used to grow gallium arsenide (GaAs)
nanocrystals (NCs) on germanium (Ge) templates on nanoscopic silicon (Si)
threads prepared by reactive ion etching. Scanning transmission electron
microscopy with energy dispersive X-ray measurements shows an epitaxial
growth of the GaAs on the Ge template that is supported by the Si thread,
and that Ge doping is induced to the GaAs by the template. On Ge templates
of about 60 nm diameter, as-grown GaAs NCs show a very regular rhombic-
dodecahedral outer shape that can be explained by a preferential growth along
the <110> plane. Photoluminescence measurements of the Ge/GaAs structures
reveal radiative emission peaks on top of the GaAs band-to-band emission and at
sub-band gap energies. While high energy peaks are originating from Ge acceptor
levels in GaAs, sub-band gap peaks can be explained by radiation from Ge donor
and acceptor bands that are amplified by photonic modes hosted in the rhombic-
dodecahedral GaAs NCs. This study shows that a template-assisted crystal
growth at the nanoscale opens up routes for a versatile integration of strongly
emitting nanomaterials for a use in on-chip solid state lighting and photonics.

Authors with CRIS profile

Stefanie Rechberger Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Christel Dieker Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Erdmann Spiecker Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)

Additional Organisation(s)

Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE) University of New South Wales (UNSW) AU Australia (AU)

How to cite

APA:

Schmitt, S.W., Sarau, G., Speich, C., Doehler, G.H., Liu, Z., Hao, X.,... Christiansen, S. (2018). Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon: A Versatile Platform for Modern Optoelectronic Materials. Advanced Optical Materials. https://dx.doi.org/10.1002/adom.201701329

MLA:

Schmitt, Sebastian W., et al. "Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon: A Versatile Platform for Modern Optoelectronic Materials." Advanced Optical Materials (2018).

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