Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates

Schuh P, Vecera P, Hirsch A, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P (2016)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2016

Journal

Publisher: Trans Tech Publications Ltd

City/Town: Switzerland

Book Volume: 858

Pages Range: 89-92

Conference Proceedings Title: Materials Science Forum (Volume 858)

Event location: Giardini Naxos IT

ISBN: 9783035710427

DOI: 10.4028/www.scientific.net/MSF.858.89

Abstract

We have developed and investigated the quasi-bulk crystal growth of 3C-SiC on transferred, high quality, CVD-grown templates using a sublimation sandwich technique. The 3CSiC seeding template layers grown on silicon were removed from the silicon carrier using a solution of hydrofluoric acid, nitric acid and water and glued to a SiC substrate using carbon glue. The transferred layers were used as seeding material to grow high quality, single crystalline, double position boundary free 3C-SiC crystals with thicknesses of up to 860 μm and a size of 18 x 20 mm. Analysis of the bulk-like 3C-SiC layers was carried out using Laue measurement in back-reflecting geometry, Raman spectroscopy and optical microscopy.

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APA:

Schuh, P., Vecera, P., Hirsch, A., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2016). Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates. Materials Science Forum, 858, 89-92. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.89

MLA:

Schuh, Philipp, et al. "Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates." Materials Science Forum 858 (2016): 89-92.

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