Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals

Journal article


Publication Details

Author(s): Will J, Gröschel A, Weißer M, Magerl A
Journal: Applied Physics Letters
Publisher: AMER INST PHYSICS
Publication year: 2011
Volume: 98
Journal issue: 4
ISSN: 0003-6951


Abstract


The thickness dependence of the integrated Bragg intensities for Czochralski-grown silicon was measured with the characteristic tungsten K(alpha 1)-line at 59.3 keV. In contrast to previous experiments the sample is wedge shaped, which allows to take data over a wide range of Pendellosung fringes in one exposure only and without any mechanical movement of the sample. The period length, the oscillation amplitude, and the mean value of the Bragg intensity can be explored to identify the presence of point defects, and the temperature dependence of the period length allows to quantify the thermal Debye-coefficient with high precision. (c) 2011 American Institute of Physics. [doi:10.1063/1.3531761]



FAU Authors / FAU Editors

Gröschel, Alexander
Lehrstuhl für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Weißer, Matthias Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik


How to cite

APA:
Will, J., Gröschel, A., Weißer, M., & Magerl, A. (2011). Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals. Applied Physics Letters, 98(4). https://dx.doi.org/10.1063/1.3531761

MLA:
Will, Johannes, et al. "Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals." Applied Physics Letters 98.4 (2011).

BibTeX: 

Last updated on 2018-11-08 at 02:11