Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

Journal article


Publication Details

Author(s): Will J, Gröschel A, Bergmann C, Spiecker E, Magerl A
Journal: Journal of Applied Physics
Publisher: American Institute of Physics (AIP)
Publication year: 2014
Volume: 115
Journal issue: 12
ISSN: 0021-8979


Abstract


X-ray Pendellosung fringes from three silicon single crystals measured at 900 degrees C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm(2)) similar to published data. Further, an increased nucleation rate by a factor of similar to 13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 degrees C. (C) 2014 AIP Publishing LLC.



FAU Authors / FAU Editors

Bergmann, Christoph
Lehrstuhl für Kristallographie und Strukturphysik
Gröschel, Alexander
Lehrstuhl für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Spiecker, Erdmann Prof. Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik


Additional Organisation
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


How to cite

APA:
Will, J., Gröschel, A., Bergmann, C., Spiecker, E., & Magerl, A. (2014). Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction. Journal of Applied Physics, 115(12). https://dx.doi.org/10.1063/1.4868586

MLA:
Will, Johannes, et al. "Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction." Journal of Applied Physics 115.12 (2014).

BibTeX: 

Last updated on 2018-01-09 at 07:08