Radial oxygen precipitation of a 12 '' CZ silicon crystal studied in-situ with high energy X-ray diffraction

Bergmann C, Will J, Gröschel A, Weißer M, Magerl A (2014)


Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Publisher: WILEY-V C H VERLAG GMBH

Book Volume: 211

Pages Range: 2450-2454

Journal Issue: 11

DOI: 10.1002/pssa.201400062

Abstract

The radial oxygen nucleation and precipitation in Czochralski-grown silicon crystals is observed in real time via the local evolution of the X-ray Bragg intensity. Using a high X-ray energy and a divergent beam setup, it becomes possible to examine the impact of the local as-grown point defect configuration on the formation of bulk micro defects in a crystal of macroscopic dimensions. As a salient feature the transition from vacancy- to interstitial-dominated regions in a 12 crystal can be identified, and its influence on the precipitation kinetics is quantified through effective oxygen diffusion constant. It appears enhanced by up to a factor of six in vacancy-rich regions as compared to crystal volumes which are identified as point-defect free where it agrees well with the literature value.

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How to cite

APA:

Bergmann, C., Will, J., Gröschel, A., Weißer, M., & Magerl, A. (2014). Radial oxygen precipitation of a 12 '' CZ silicon crystal studied in-situ with high energy X-ray diffraction. physica status solidi (a), 211(11), 2450-2454. https://dx.doi.org/10.1002/pssa.201400062

MLA:

Bergmann, Christoph, et al. "Radial oxygen precipitation of a 12 '' CZ silicon crystal studied in-situ with high energy X-ray diffraction." physica status solidi (a) 211.11 (2014): 2450-2454.

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